相邻障碍物的分割是无人驾驶领域的技术难点，低线激光雷达点云稀疏，无法聚类远距离物体，但激光雷达线束越多越昂贵。为了实现低成本聚类分割相邻障碍物，实验场景选取常用交通场景对象相邻的人/人、人/车，提出了一种基于多帧融合的相邻障碍物分割方法。基于惯性测量单元、激光雷达融合多帧点云，解决了低线激光雷达因分辨率低而无法聚类远距离相邻行人的问题。提出改进的欧式聚类，加入自适应阈值和向量角度约束两个新的分割标准，提高相邻障碍物的分割效果。实验结果表明，该方法具有成本低、聚类精准等特点，与单帧传统欧式聚类算法相比，该方法针对相邻障碍物分割的准确度提升约30.7%，对低线激光雷达在障碍物聚类以及后续的检测具有一定参考意义。

Surface lattice resonances (SLRs) with ultra-narrow linewidth (high quality factor) can enhance light–matter interactions at the nanoscale and modulate the propagating light from the emission wavelength direction to efficiency by photonic band engineering. Therefore, SLRs can serve as an excited candidate to enhance and, more importantly, modulate amplified spontaneous emission (ASE) with more optical parameters. Here, this work presents a system of two-dimensional Ag-coated Al nanocone array (Ag-NCA) packaged with Nile red, and a normal ASE with 15-fold enhancement is observed under external driving light. This enhancement fades away, obviously, in the case of the off-normal condition, as the optical feedback evolves from the band edge steady state to the propagating state. The ASE of this hybrid plasmonic system expands the possibilities of interaction between light and matter and has great promise for applications in nanolasing, super-resolution imaging, and photonic integration circuits.

在最近的实验中，PN结型量子阱结构被观察到反常的载流子输运情况，其相应的物理机制和载流子输运模型被提出。通过系统实验观察到，PN结量子阱结构材料在共振激发模式下，仍可测出开路电压或短路电流。对比开路和短路情况下的光致荧光（PL）光谱，发现短路下PL强度明显降低。这说明短路状态下的光生载流子没有被限制在量子阱内，而是逃逸出结区。这种载流子逃出量子阱的现象却没有在等量偏压下的NN型量子阱结构中发现，说明载流子逃出量子阱并非由传统的热激发或隧穿的作用导致。据此，笔者提出了相应的物理机制和载流子输运模型对此现象进行解释，认为光生载流子能在PN结内建电场的作用下直接逃出量子阱，并且辐射复合发光发生在载流子逃逸过程之后。

An internal photoemission-based silicon photodetector detects light below the silicon bandgap at room temperature and can exhibit spectrally broad behavior, making it potentially suited to meet the need for a near-infrared pure Si photodetector. In this work, the implementation of a thin Au insertion layer into an ITO/n-Si Schottky photodetector can profoundly affect the barrier height and significantly improve the device performance. By fabricating a nanoscale thin Au layer and an ITO electrode on a silicon substrate, we achieve a well-behaved ITO/Au/n-Si Schottky diode with a record dark current density of 3.7×10-7A/cm2 at -1V and a high rectification ratio of 1.5×108 at ±1V. Furthermore, the responsivity has been obviously improved without sacrificing the dark current performance of the device by decreasing the Au thickness. Such a silicon-based photodetector with an enhanced performance could be a promising strategy for the realization of a monolithic integrated pure silicon photodetector in optical communication.